METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to improve an electric conductivity and electrical properties of a metal line layer and to simplify forming processes for an insulating layer by using ITO(Indium Tin Oxide) and photoresist as the metal line layer and the insulating layer. A trench is formed on a film(301) by performing an etching process using a first photoresist pattern as an etch mask. A metal film is deposited on the entire surface of the resultant structure. A metal line(307) is formed on the resultant structure by removing the first photoresist pattern. An insulating layer(309) is formed on the resultant structure by coating a second photoresist layer. A contact hole for exposing the metal line to the outside is formed on the resultant structure by patterning selectively the second photoresist layer.