| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to form a polycrystal silicon layer of a large area with low cost by crystallizing an amorphous semiconductor layer formed on a glass substrate at low temperature. A combustion gas is sprayed onto a member containing a metal element, in which the combustion gas is obtained by burning a mixed gas including a gas containing hydrogen atom and oxygen gas. The combustion gas is sprayed onto an amorphous semiconductor film placed on a substrate having an insulating surface. The metal element is added to the vicinity of a surface of the amorphous semiconductor film to enhance re-crystallization of semiconductor. The amorphous semiconductor film is heated with the metal element to modify the amorphous semiconductor film into a polycrystalline semiconductor film.</p> |
