| 摘要 |
An array substrate for an IPS(In-Plane Switching) mode and a method for manufacturing the same are provided to improve the response speed and increase the aperture ratio, by forming common electrodes and pixel electrodes on the same layer so as to enhance the magnitude of electric field between the pixel electrode and the common electrodes. A gate line and a data line cross each other to define a pixel region. A common line(267) is formed in parallel with the gate line. A thin film transistor(TrA) is connected to the gate line and the data line. A passivation layer(250) has a convex portion(250b) having a first thickness and the other portion(250a) having a second thickness smaller than the first thickness. The convex portion of the passivation layer is protruded above the thin film transistor and the data line correspondingly to the data line, wherein both sides of the convex portion are inclined with respect to a substrate. A plurality of pixel electrodes(263) are disposed above the passivation layer, wherein the pixel electrodes are electrically connected to the thin film transistor and distanced from each other. A plurality of center common electrodes(267b) and the outermost common electrodes(267a) are connected to the common line. The center common electrodes are distanced from the outermost common electrode, and arranged alternately with the pixel electrodes. |
