发明名称 |
Simultaneous selective polymer deposition and etch pitch doubling for sub 50nm line/space patterning |
摘要 |
First radicals and second radicals are simultaneous deposited into a space defined by two adjacent lines of photoresists and an underlying layer. A portion of the first radicals and the second radicals combine to form a polymer layer on the layer in the center of the space, and substantially simultaneously, another portion of thee first radicals remove the underlying layer near the base of the photoresists. The first radicals may be fluorine-rich and the second radicals may be carbon-rich.
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申请公布号 |
US2007228002(A1) |
申请公布日期 |
2007.10.04 |
申请号 |
US20060395626 |
申请日期 |
2006.03.31 |
申请人 |
GENG QIQUAN;XU JEFF J;LEE EVERETT B;RU MICHAEL T;YANG HSU-EN;HUI CHUNG |
发明人 |
GENG QIQUAN;XU JEFF J.;LEE EVERETT B.;RU MICHAEL T.;YANG HSU-EN;HUI CHUNG |
分类号 |
B44C1/22;C03C25/68 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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