摘要 |
<p>A memory cell (36, 110) is programmed by injecting charge into a charge storage layer (42, 116) of the memory cell. A desired programmed charge results in the charge storage layer over an edge portion of a channel region of the memory cell. An undesired programmed charge results in the charge storage layer over an inner portion of the channel region. Charge tunneling is used to substantially remove the undesired programmed charge in the charge storage layer. In one form the memory cell has a substrate having (38, 112) a channel region, a first dielectric layer (40, 114) over the substrate and a charge storage layer (42, 116) over the first dielectric layer. A second dielectric layer (44, 130) over the charge storage layer has a first portion (58 or 54; 104 or 108) that is thicker than a second portion (106) to selectively control the charge tunneling.</p> |