| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which can improve light extraction efficiency from an optional light extraction surface. <P>SOLUTION: An anode electrode 5 is formed on a p-type semiconductor layer 4 on one surface side of a base substrate formed of a sapphire substrate, and a cathode electrode 6 is formed on the lamination side of a light emitting layer 3 in an n-type semiconductor layer 2. The cathode electrode 6 is comprised of an ohmic contact layer 61 and an external connection metal layer 62. The semiconductor light emitting device is provided with a multilayer mirror 53 which is provided on the side of the light emitting layer 3 in the anode electrode 5 located on the opposite side to the optional light extraction surface (other surface of the base substrate 1) against the light emitting layer 3, and which reflects a light radiated from the light emitting layer 3 wherein two kinds of conductive dielectric films 53a and 53b with different refractive indexes are periodically stacked. The anode electrode 5 is comprised of the multilayer film mirror 53, an ohmic contact layer 51, and external connection metal layer 52. <P>COPYRIGHT: (C)2008,JPO&INPIT |
