| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure method capable of enhancing a shot efficiency (that it is desired to make a shot of as large area as possible by single-time exposure). <P>SOLUTION: The semiconductor integrated circuit device includes both a pattern 207 which needs to have a high NA and a pattern 209 which may have a low NA, so the center 211 of exposure is determined by using characteristics of an aperture degree, so that the exposure can be carried out with the aperture degree requested for each of the patterns. <P>COPYRIGHT: (C)2008,JPO&INPIT |
