发明名称 |
POROUS LOW DIELECTRIC CONSTANT THIN FILM AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide the structure of a porous low dielectric constant material thin film and related manufacturing method for solving various problems associated with the conventional technology. SOLUTION: The method of manufacturing the porous low dielectric constant material thin film includes processes of: (a) preparing a substrate; (b) conducting a first chemical vapor deposition (CVD) process, and introducing a backbone precursor into a deposition chamber to form an interfacial dielectric layer on the substrate; (c) conducting a second CVD process, introducing a porogen precursor into the deposition chamber while at the same time introducing a backbone precursor, and combining the porogen precursor with the backbone precursor to form a backbone layer containing porogen on the interfacial dielectric layer; and (d) removing the porogen out of the backbone layer to form an ultralow dielectric constant material layer having a plurality of pores. The interfacial dielectric layer and the ultralow dielectric constant material layer constitute the porous low dielectric constant material thin film. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2007258403(A) |
申请公布日期 |
2007.10.04 |
申请号 |
JP20060080140 |
申请日期 |
2006.03.23 |
申请人 |
UNITED MICROELECTRONICS CORP |
发明人 |
CHEN MEI-LIANG;SUNG SU-JEN;LAI KUO-CHIH;CHEN JEI-MING |
分类号 |
H01L21/316;H01L21/768;H01L23/522 |
主分类号 |
H01L21/316 |
代理机构 |
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地址 |
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