发明名称 |
Epitaxial silicon germanium for reduced contact resistance in field-effect transistors |
摘要 |
A method for selectively relieving channel stress for n-channel transistors with recessed, epitaxial SiGe source and drain regions is described. This increases the electron mobility for the n-channel transistors without affecting the strain in p-channel transistors. The SiGe provides lower resistance when a silicide is formed.
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申请公布号 |
US2007231983(A1) |
申请公布日期 |
2007.10.04 |
申请号 |
US20060395939 |
申请日期 |
2006.03.31 |
申请人 |
SHIFREN LUCIAN;KAVALIEROS JACK T;CEA STEVEN M;WEBER CORY E;BRASK JUSTIN K |
发明人 |
SHIFREN LUCIAN;KAVALIEROS JACK T.;CEA STEVEN M.;WEBER CORY E.;BRASK JUSTIN K. |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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