| 摘要 |
A semiconductor layer contains, as a principal constituent, a Groups III-V semiconductor compound, which may be represented by the general formula: B<SUB>x</SUB>Al<SUB>y</SUB>Ga<SUB>z</SUB>N, wherein x represents a number satisfying the condition 0<x<1, y represents a number satisfying the condition 0<=y<1, and z represents a number satisfying the condition 0<z<1, with the proviso that x+y+z=1, the semiconductor layer having been formed with a laser assisted metalorganic vapor phase epitaxy technique. A semiconductor light emitting device comprises the semiconductor layer and may be constituted as a semiconductor laser or a light emitting diode.
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