PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

The occurrence of a failure during plug formation is inhibited. A structure comprising alumina films and an interlayer dielectric sandwiched therebetween is formed (steps S3 to S5). Then, contact holes passing through these layers are formed (step S7). Thereafter, annealing is conducted in an inert-gas atmosphere or a vacuum for a given time at a given temperature (step S8), and the contact holes are sufficiently degassed. Thus, degassing of the contact holes during tungsten plug formation is inhibited and the contact holes can be inhibited from coming to have a part not filled with a tungsten plug. Therefore, a semiconductor device can be realized which has an interlayer contact structure having low resistance.