| 摘要 |
A surface-emitting type semiconductor laser includes: a first mirror; an active layer formed above the first mirror; a second mirror formed above the active layer; a current constricting section formed above or below the active layer; and a diffraction grating formed above the active layer and arranged in a plane perpendicular to a light emission direction, wherein a light confining region surrounded by the diffraction grating is formed inside a region surrounded by the current constricting section as viewed in a plan view.
|
