发明名称 |
Stacked multi-gate transistor design and method of fabrication |
摘要 |
A multi-body thickness (MBT) field effect transistor (FET) comprises a silicon body formed on a substrate. The silicon body may comprise a wide section and a narrow section between the wide section and the substrate. The silicon body may comprise more than one pair of a wide section and a narrow section, each pair being located at a different height of the silicon body. The silicon body is surrounded by a gate material on three sides. The substrate may be a bulk silicon substrate or a silicon-on-insulator (SOI) substrate. The MBT-FET combines the advantages of a wide fin device and a narrow fin device.
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申请公布号 |
US2007231997(A1) |
申请公布日期 |
2007.10.04 |
申请号 |
US20060395860 |
申请日期 |
2006.03.31 |
申请人 |
DOYLE BRIAN S;RAKSHIT TITASH;CHAU ROBERT S;DATTA SUMAN;BRASK JUSTIN K;SHAH UDAY |
发明人 |
DOYLE BRIAN S.;RAKSHIT TITASH;CHAU ROBERT S.;DATTA SUMAN;BRASK JUSTIN K.;SHAH UDAY |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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