| 摘要 |
A manufacturing method for a semiconductor device according to the present invention includes the steps of: growing a p-type contact layer formed of a p-type GaN layer; forming an insulating film on a surface of the p-type contact layer, on which a p-side electrode is to be formed, by coating an insulating film material on the surface and thereafter baking the insulating film material; and annealing the p-type semiconductor layer in a state where the insulating film is formed on the p-type contact layer.
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