CONTROL METHOD OF THE HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION APPARATUS FOR FORMING A INTER-LAYER DIELECTRIC FILM

摘要

A method for controlling HDP(High Density Plasma) CVD equipment for forming an interlayer dielectric is provided to prevent the generation of voids on the interlayer dielectric and to improve the yield and reliability of a semiconductor device by improving the uniformity of thickness between edge and center portions of a deposited layer using a proper modification of process parameters. An interlayer dielectric is deposited on a wafer(W) with a metal line in a reaction chamber(102). The wafer is stably loaded on a fixed chuck(104). A high frequency power is applied to the fixed chuck and a low frequency power is applied to an upper wall of the reaction chamber. A reaction gas is supplied to the wafer. Ar gas is used as a main gas of the reaction gas. The flow rate of the Ar gas is in a range of 170 to 200 sccm, the amount of the low frequency power is in a range of 3000 to 3400 W and the amount of the high frequency power is in a range of 2400 to 2550 W.