发明名称 |
SURFACE TREATMENT METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF CAPACITIVE ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of treatment by which moisture contained in a treated object is efficiently removed and re-adsorption of the moisture is prevented by solving a conventional problem. SOLUTION: The treatment method for treating the treated object containing the moisture has a step of removing the moisture contained in the treated object in an atmosphere containing excited deuterium, deuterated hydrogen, or tritium. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2007258662(A) |
申请公布日期 |
2007.10.04 |
申请号 |
JP20060211055 |
申请日期 |
2006.08.02 |
申请人 |
CANON INC |
发明人 |
ISHIHARA SHIGENORI;KAWASE NOBUO |
分类号 |
H01L21/318;B41J2/135;H01L21/304;H01L21/822;H01L27/04;H01L29/78 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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