发明名称 SURFACE TREATMENT METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF CAPACITIVE ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method of treatment by which moisture contained in a treated object is efficiently removed and re-adsorption of the moisture is prevented by solving a conventional problem. SOLUTION: The treatment method for treating the treated object containing the moisture has a step of removing the moisture contained in the treated object in an atmosphere containing excited deuterium, deuterated hydrogen, or tritium. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007258662(A) 申请公布日期 2007.10.04
申请号 JP20060211055 申请日期 2006.08.02
申请人 CANON INC 发明人 ISHIHARA SHIGENORI;KAWASE NOBUO
分类号 H01L21/318;B41J2/135;H01L21/304;H01L21/822;H01L27/04;H01L29/78 主分类号 H01L21/318
代理机构 代理人
主权项
地址