发明名称 |
SUBSTRATE-TREATING DEVICE, DEPOSIT MONITORING DEVICE, AND DEPOSIT MONITORING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate-treating device capable of improving the degree of freedom related to the installation of components required for a deposit monitoring device for analyzing deposits directly. SOLUTION: The substrate-treating device 10 has a chamber 11 for performing etching treatment to a wafer W. The deposit monitoring device 50 is installed on an inner wall 11a of the chamber 11. The deposit monitoring device 50 comprises: an optical fiber 60; a laser 71 connected to one end of the optical fiber 60; and a photodiode 73 connected to the other end of the optical fiber 60. The deposit monitoring device 50 directly analyzes deposits adhered to an exposure section 61 in the optical fiber 60 exposed into the chamber 11. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2007258238(A) |
申请公布日期 |
2007.10.04 |
申请号 |
JP20060077264 |
申请日期 |
2006.03.20 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
YAMAZAWA YOHEI;MATSUDO TATSUO |
分类号 |
H01L21/3065;H01L21/205 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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