| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device which mixes a first material gas and a second material gas together, and supplies the mixed gas to a processing object substrate capable of supplying the mixed gas uniformly to the processing object substrate in a large area. <P>SOLUTION: The plasma processing device has in a plasma producing chamber a first material gas outlet through which a first material gas is discharged out; a plasma generating unit which generates the plasma of the discharged first material gas, excites the first material gas so as to obtain reactive active species, and is configured so as to be provided with an antenna array composed of antenna elements which are formed of cylindrical conductors whose surfaces are coated with dielectric material, and arranged in a two-dimensional manner; a second material gas discharge means which discharges the second material gas against the reactive active species, to form a mixture of the reactive active species and the second material gas; and a processing object substrate to which the mixture is supplied. <P>COPYRIGHT: (C)2008,JPO&INPIT |
