发明名称 SUBSTRATE PLACING MECHANISM AND SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate placing mechanism that is not brought to destruction even in high-temperature processing, on which electrical discharge hardly arises in a heat generator element arranging section, and a substrate processing apparatus using such a substrate placing mechanism. SOLUTION: A wafer placing mechanism places a wafer W in a chamber, and has a wafer heating capability as well. The mechanism is equipped with a mounting stand 5 that has heat generator elements 54 composed of silicon carbide arranged in a predetermined pattern to place a wafer, a power supply electrode for supplying power to the heat generator elements 54, and dividers 73, 74a, and 74b composed of insulators prepared between mutually adjacent parts in the heat generator elements 54 of the predetermined pattern. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007258585(A) 申请公布日期 2007.10.04
申请号 JP20060083633 申请日期 2006.03.24
申请人 TOKYO ELECTRON LTD 发明人 YAMASHITA JUN
分类号 H01L21/205;H01L21/02;H01L21/3065;H05B3/14;H05B3/74 主分类号 H01L21/205
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