GROUP III NITRIDE COMPOUND SEMICONDUCTOR, METHOD FOR MAKING P-TYPE SEMICONDUCTOR THEREFROM, INSULATION SEPARATION METHOD, AND TRANSISTOR USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for making a p-type semiconductor out of a group III nitride compound semiconductor and an element having the p-type region. SOLUTION: Magnesium (Mg) is partially injected into a group III nitride compound semiconductor on a plane surface, and thereafter, the magnesium is thermally diffused in a horizontal direction on the plane surface and in a direction vertical to the plane surface, thus making the diffused region a p-type region. Then, silicon (Si) is added to the injected area to form an n-type region. This can exclude an injected area of high resistance. COPYRIGHT: (C)2008,JPO&INPIT