| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal pulling device that can suppress adverse influences of SiO gas generating from a silicon melt on a heat generating part of a heater and can achieve improvement in a life time of the heater and high quality of a single crystal. SOLUTION: The device is equipped with a first gas supply means 13, 14, 17 to supply inert gas G from above a crucible 3, a second gas supply means 15, 16, 17 to supply inert gas G from below a heater 4, and an air discharging means 19 disposed above the heater 4 to discharge the inert gas G through a discharge port 18 to the outside of a furnace 2, wherein the inert gas G supplied by the first gas supply means 13, 14, 17 is introduced from above the crucible 3 into the crucible and discharged through the discharge port 18 above the heater 4, while the inert gas G supplied by the second gas supply means 15, 16, 17 flows upward between the heater 4 and the crucible 3 and discharged through the discharge port 18 above the heater 4. COPYRIGHT: (C)2008,JPO&INPIT
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