| 摘要 |
A memory and a manufacturing method thereof are provided to form the memory of cross point type by arranging diodes consisting of first and second impurity regions in a matrix pattern. A first impurity region(12) of first conductive type is formed on a main surface of a semiconductor substrate to serve as one electrode of a diode(10) and a word line. A second impurity region(14) of second conductive type is formed on a surface of the first impurity region to serve as the other electrode of the diode. A bit line(8) is formed on the substrate, and is connected to the second impurity region. A wiring(27) is formed on a bottom layer lower than the bit line, and is connected to the first impurity region at regular intervals.
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