| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate-treating device capable of monitoring contamination with deposits in real time. SOLUTION: The substrate-treating device 10 has a chamber 11 for performing etching treatment to a wafer W. A deposit monitoring device 50 is installed on an inner wall 11a of the chamber 11. The deposit monitoring device 50 comprises: a pair of conductors 60a, 60b made of conductive materials; and a capacitance meter 70 connected to each one end of the conductors 60a, 60b. The capacitance meter 70 measures the value of the capacitance of a capacitor composed of the conductors 60a, 60b. COPYRIGHT: (C)2008,JPO&INPIT
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