| 摘要 |
The invention describes a means for electrically contacting the active semiconductor in a solar cell through the use of an accumulation barrier. A heavily-doped, wide-gap semiconductor serves as the contacting material. The carrier band of the contact lies at a substantially higher potential energy than that of the corresponding band of the absorber and an accumulation barrier at the contact interface is thus produced. This type of contact presents several advantages, including the ability to use an all-intrinsic absorber, the formation of a low resistance ohmic contact and providing for a large, temperature independent built-in potential across the absorber.
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