发明名称 FLASH MEMORY SYSTEM CONTROL SCHEME
摘要 A Flash memory system architecture having serially connected Flash memory devices to achieve high speed programming of data. High speed programming of data is achieved by interleaving pages of the data to be programmed amongst the memory devices in the system, such that different pages of data are stored in different memory devices. A memory controller issues program commands for each memory device. As each memory device receives a program command, it either begins a programming operation or passes the command to the next memory device. Therefore, the memory devices in the Flash system sequentially program pages of data one after the other, thereby minimizing delay in programming each page of data into the Flash memory system. The memory controller can execute a wear leveling algorithm to maximize the endurance of each memory device, or to optimize programming performance and endurance for data of any size.
申请公布号 US2007233939(A1) 申请公布日期 2007.10.04
申请号 US20070693027 申请日期 2007.03.29
申请人 MOSAID TECHNOLOGIES INCORPORATED 发明人 KIM JIN-KI
分类号 G06F12/00 主分类号 G06F12/00
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