发明名称 METHOD FOR FORMING CONTACT HOLE ISOTROPIC PROFILE
摘要 A method for forming an isotropic profile of a contact hole is provided to easily obtain a profile of a wine glass by reducing differences of an etch rate between a TEOS(Tetra Ethyl Ortho Silicate) layer and a BPSG(Boron Phosphoroous Silciate Glass) layer using an anisotropic dry etching apparatus. A first photoresist is formed on an oxide layer(21), and then a primary oxide etching process is performed on the oxide layer by using an anisotropic etching apparatus. A second photoresist(13) is formed on the etched oxide layer, and then a secondary oxide etching process is performed on the oxide layer by using the anisotropic etching apparatus. The second photoresist is removed, and then an oxide reflow process is performed on the oxide layer in a furnace.
申请公布号 KR100763701(B1) 申请公布日期 2007.10.04
申请号 KR20060083923 申请日期 2006.08.31
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 LEE, WAN GI
分类号 H01L21/28;H01L21/306 主分类号 H01L21/28
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