| 摘要 |
The pattern formation material of this invention is a chemically amplified resist material including a polymer whose solubility in a developer is changed in the presence of an acid; an acid generator for generating an acid through irradiation with exposing light; and a base generator for generating a base through irradiation with the exposing light. The base generator is more photosensitive to longer band light of a wavelength longer than extreme UV than to extreme UV when irradiated, as the exposing light, with the extreme UV and the longer band light at equivalent exposure energy. |
