NONVOLATILE MEMORY DEVICE AND WORD LINE VOLTAGE CONTROL METHOD THEREOF

摘要

A nonvolatile memory device and a word line voltage control method thereof are provided to improve programming performance, by controlling the level of a programming voltage applied to each programming loop and the applying time of the programming voltage by reflecting operation characteristics of each nonvolatile memory device. A memory cell array(110) has a plurality of memory cells. A word line voltage control circuit(170) determines the level of a programming voltage to be applied to the memory cells and the time of applying the programming voltage as to each of a plurality of programming loops. The word line voltage control circuit includes an initial level setting part for setting the level of an initial programming voltage, a counter for counting the generation frequency of a step control signal controlling the generation of the programming voltage on the basis of the level of the initial programming voltage, and a decoding part for determining the level of the programming voltage to be applied to each programming loop and the time of applying the programming time, in response to the count value.