发明名称 |
Structure and method for fabricating a bond pad structure |
摘要 |
A structure and method for an improved a bond pad structure. A top wiring layer and a top dielectric (IMD) layer over a semiconductor structure are provided. The buffer dielectric layer is formed over the top wiring layer and the top dielectric (IMD) layer. A buffer opening is formed in the buffer dielectric layer exposing at least of portion of the top wiring layer. A barrier layer is formed over the buffer dielectric layer, and the top wiring layer in the buffer opening. A conductive buffer layer is formed over the barrier layer. The conductive buffer layer is planarized to form a buffer pad in the buffer opening. A passivation layer is formed over the buffer pad and the buffer dielectric layer. A bond pad opening is formed in the passivation layer over at least a portion of the buffer pad. A bond pad support layer is formed over the buffer pad and the buffer dielectric layer. A bond pad layer is formed over the bond pad support layer. The bond pad layer and the bond pad support layer are patterned to form a bond pad and bond pad support.
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申请公布号 |
US7276797(B2) |
申请公布日期 |
2007.10.02 |
申请号 |
US20050284981 |
申请日期 |
2005.11.21 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
FAN ZHANG;CHAO ZHANG BEI;WUPING LIU;LIEP CHOK KHO;CHOO HSIA LIANG;KHENG LIM YEOW;CUTHBERTSON ALAN;BOON TAN JUAN |
分类号 |
H01L29/40;H01L21/60;H01L23/485;H01L23/532 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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