发明名称 |
Long wavelength indium arsenide phosphide (InAsP) quantum well active region and method for producing same |
摘要 |
An InAsP active region for a long wavelength light emitting device and a method for growing the same are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film, forming a quantum well layer of InAsP, and forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C. Forming the quantum well layer and the barrier layer at a temperature of less than 520 degrees C. results in fewer dislocations by suppressing relaxation of the layers. A long wavelength active region including InAsP quantum well layers and InGaP barrier layers is also disclosed.
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申请公布号 |
US7276390(B2) |
申请公布日期 |
2007.10.02 |
申请号 |
US20020230895 |
申请日期 |
2002.08.29 |
申请人 |
AVAGO TECHNOLOGIES GENERAL IP PTE LTD |
发明人 |
BOUR DAVID P.;TAN MICHAEL R. T.;PEREZ WILLIAM H. |
分类号 |
H01L21/205;H01L21/20;H01L33/00;H01S5/343 |
主分类号 |
H01L21/205 |
代理机构 |
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地址 |
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