发明名称 CLOCK BUFFER CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 A clock buffer circuit of a semiconductor memory device is provided to achieve low power consumption of the device by reducing an output current in a power down mode of the semiconductor memory device. A differential amplifier part(150) amplifies a clock signal differentially and then buffers the clock signal. An enable part(110) generates a buffer enable signal controlling the operation of the differential amplifier part, and disables the differential amplifier part by disabling the buffer enable signal in a power down mode of a semiconductor device in response to the input of at least one control signal. The control signal includes an inverted clock enable signal, a self refresh signal and RAS idle signals.
申请公布号 KR20070096614(A) 申请公布日期 2007.10.02
申请号 KR20060027440 申请日期 2006.03.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, JOO AE
分类号 G11C7/22 主分类号 G11C7/22
代理机构 代理人
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