METHOD OF FORMING METAL LINE FOR SEMICONDUCTOR DEVICE

摘要

A method for forming a metal line of a semiconductor device is provided to reduce generation of non-etch type polymers by etching a metal layer in multiple steps and to improve etching uniformity. A diffusion barrier(102) and a conductive layer for wiring are formed on a semiconductor substrate(100). A photoresist layer pattern is formed on the conductive layer for wiring. A wiring pattern is formed by dry-etching the conductive layer for wiring during a first dry etch process using the photoresist layer pattern as a mask. A protective layer is formed on a surface of the wiring pattern by removing a part of the photoresist layer pattern during a second dry etch process. The protective layer is removed by performing a third dry etch process using the photoresist layer pattern as a mask. A metal line(106) including the diffusion barrier and a metal layer(104) is formed by etching the wiring pattern and the diffusion barrier.