发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND IMMERSION LITHOGRAPHY SYSTEM
摘要 <p>A method for manufacturing a semiconductor device and an immersion lithography system are provided to suppress the reduction of a yield by improving a manufacturing method. An inspecting process is performed to inspect at least one of surfaces of edges of a semiconductor substrate. A determining process is performed to determine at least one of presence/absence of film delamination and presence/absence of particle adhesion on at least one of the lateral surface of the edge of the semiconductor substrate and the upper surface of the edge of the semiconductor substrate on the basis of a result obtained in the inspecting process. An executing process is performed to execute a predetermined coping process when it is determined that occurrence of one of the film delamination and the particle adhesion in the determining process.</p>
申请公布号 KR20070096951(A) 申请公布日期 2007.10.02
申请号 KR20070029242 申请日期 2007.03.26
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KAWAMURA DAISUKE
分类号 H01L21/027 主分类号 H01L21/027
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