| 摘要 |
<p>A plasma processing apparatus and its method is provided to improve the durability of a portion of a chamber or components disposed in the chamber which are exposed to a plasma atmosphere. A plasma processing apparatus includes a chamber(1) accommodating an object to be process with plasma of an etching gas, and a component disposed in the chamber. A portion of the chamber exposed to a plasma forming atmosphere or the component is provided with a composite layer consisting of a porous layer made of a metal oxide and a secondary recrystallized layer of the metal oxide formed on the porous layer. An undercoat layer made from a metal-alloy, ceramic or cermet is formed under the porous layer.</p> |
