METHOD OF REMOVING A PHOTORESIST PATTERN, METHOD OF FORMING A DUAL POLYSILICO LAYER AUSING THE SAME ND METHOD OF MANUFCATURING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method for removing a photoresist pattern, a method for forming a dual polysilicon layer using the same and a method for manufacturing a semiconductor device are provided to remove easily the photoresist pattern without organic residues by performing a pre-treatment capable of changing a cured photoresist into a soluble photoresist using ozone and water vapor or ozone and an alkali based material. A photoresist pattern is formed on an object layer. An ion implantation is performed on the object layer by using the photoresist pattern as an ion implantation mask. At this time, the photoresist pattern is cured. The cured photoresist pattern is changed into a soluble photoresist pattern(130) by performing a pre-treatment process using ozone and water vapor. The soluble photoresist pattern is removed from the object layer by using an ashing process and a stripping process.