发明名称 |
Methods of fabricating silicon-on-insulator substrates having a laser-formed single crystalline film |
摘要 |
In some methods of fabricating a silicon-on-insulator substrate, a semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A first insulating film is formed on the defined region of the semiconductor substrate with an opening that exposes a portion of the defined region of the semiconductor substrate having the single crystalline structure. A first non-single crystalline film is formed on the exposed portion of the semiconductor substrate and that at least substantially fills the opening in the first insulating film. A laser beam is generated that heats the first non-single crystalline film to change the first non-single crystalline film into a first single crystalline film having substantially the same single crystalline structure as the defined region of the semiconductor substrate.
|
申请公布号 |
US2007224789(A1) |
申请公布日期 |
2007.09.27 |
申请号 |
US20070716894 |
申请日期 |
2007.03.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG SUNGKWAN;SON YONG-HOON;LEE JONGWOOK;SHIN YUGYUN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|