| 摘要 |
PROBLEM TO BE SOLVED: To enhance the performance of a semiconductor device having a CMIS (Complementary Metal Insulator) FET and also to reduce the number of manufacturing steps. SOLUTION: In a method of manufacturing a semiconductor device having a CMIS FET, a first metallic film made of a silicon film and a first metal is first subjected to heat treatment for reaction to thereby form a gate electrode 31b of a p-channel type MIS (Metal Insulator Semiconductor) FET made of metal silicide and a dummy gate electrode 32 of an n-channel type MIS FET. Then an insulating film 33 for covering the gate electrode 31b and exposing the dummy gate electrode 32 is formed, and a metallic film 35 made of a second metal having a work function lower than the work function of the first metal is formed. The metal film 35 is contacted with the dummy gate electrode 32, but not contacted with the gate electrode 31b with the insulating film 33 disposed therebetween. Thereafter, the dummy gate electrode 32 is made to react with the metallic film 35 by heat treatment to form a gate electrode of the n-channel type MIS FET. COPYRIGHT: (C)2007,JPO&INPIT
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