| 摘要 |
<P>PROBLEM TO BE SOLVED: To attain a first object of providing a piezo resistance element and a method of manufacturing the same, wherein a variation of a resistance value due to influences (surface electric field effect) of an external electric field is small, and also to attain a second object of providing the piezo resistance element and a method of manufacturing the same, wherein a breakdown strength is high and a leakage current is small. <P>SOLUTION: The method for manufacturing the piezo resistance element includes the steps of: forming a trench in a semiconductor substrate; forming a conductive resistance layer different from the semiconductor substrate in the trench; and forming the same conductive silicon layer with the semiconductor substrate above the resistance layer. Further, the piezo resistance element comprises a pair of contact areas formed in the semiconductor substrate; the resistance layer which is of a conductive type different from the semiconductor substrate, and is formed in the trench formed between the pair of contact areas of the semiconductor substrate; and a silicon layer which is of the same conductive type with the semiconductor substrate, and is formed on the resistance layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
