| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device composed of a group III nitride compound semiconductor having good crystallinity with flat front surface by using a TiN buffer layer, and to provide its manufacturing method. SOLUTION: The semiconductor device comprises a substrate, the buffer layer composed of titanium nitride formed on the substrate, and the group III nitride compound semiconductor layer formed on the buffer layer. The film thickness of the group III nitride compound semiconductor layer is made 4μm or more and 10μm or less, and the film thickness of the buffer layer is made 20 nm or more, and 200 nm or less. COPYRIGHT: (C)2007,JPO&INPIT
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