| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a ferroelectric memory device which can satisfactorily control the crystal orientation of each of layers forming a ferroelectric capacitor. SOLUTION: This manufacturing method of the ferroelectric memory device includes a process of forming a base layer 12 on the upper part of a substrate 10, and a process of stacking a lower electrode 32, a ferroelectric layer 34 and an upper electrode 36 on the upper part of the base layer 12. The forming process of the base layer 12 includes a first titanium layer forming step of forming a first titanium layer on the upper part of the substrate 10, a nitriding step of changing the first titanium layer into a titanium nitride layer, and a second titanium layer forming step of forming a second titanium layer on the titanium nitride layer. COPYRIGHT: (C)2007,JPO&INPIT
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