| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a randomly arranged fine pattern, e.g. a contact hole pattern in uniform size. <P>SOLUTION: This patterning method according to one mode comprises the steps of forming a periodically arranged first contact hole pattern consisting of a first photosensitive resin film on a processed film formed above a semiconductor substrate; and selectively forming a second contact hole pattern at the position of a plurality of the first contact hole patterns selected by a selective opening pattern, by forming the selective opening pattern comprising a second photosensitive resin film including a plurality of opening pattern species on the first photosensitive resin film. In the step of forming the first contact hole pattern, the first contact hole pattern having a size corrected according to the plurality of opening pattern species is formed so that the sizes of a plurality of the second contact hole patterns become equivalent. <P>COPYRIGHT: (C)2007,JPO&INPIT |
