| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a high breakdown voltage can be attained, while suppressing lowering of reliability, and to provide its fabrication method. SOLUTION: In the semiconductor device 100, a trench 5 is formed on the surface side of a semiconductor substrate, and the opening of the trench 5 is covered with a laminate insulating film 3, thus covering the trench 5. Consequently, an air gap region 53 is provided in the trench 5. Since the trench 5 of the semiconductor device 100 is an air gap, dielectric constant is low, as compared with that of a trench filled with an insulating film such as an SiO<SB>2</SB>film. Furthermore, in the semiconductor device 100, an SiO<SB>2</SB>column 52 for suppressing warpage of the laminate insulating film 3 is provided in the trench 5. The SiO<SB>2</SB>columns 52 may be provided, at intervals where warpage of the laminate insulating film 3 can be suppressed. COPYRIGHT: (C)2007,JPO&INPIT
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