ITO SINTERED COMPACT, SPUTTERING TARGET MATERIAL, SPUTTERING TARGET, AND MANUFACTURING METHOD OF SPUTTERING TARGET MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide an ITO sputtering target material having high usage efficiency, a long life, and a small aging change of a sputtering condition, and to provide an ITO sputtering target and an ITO sintered compact that is suited for using to obtain them.

SOLUTION: The ITO sintered compact satisfies the relationship of formular -30≤100×(Av1-Av2)/Av1≤30, wherein Av1 expresses an average value (nm) of the maximum diameter of fine particles in the In2O3host phase particles that exist in the center part of the sintered compact and Av2 expresses an average value (nm) of the maximum diameter of fine particles in the In2O3host phase particles that exist in the end part of the sintered compact.

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