发明名称 CRYSTAL GROWTH APPARATUS
摘要 PROBLEM TO BE SOLVED: To attain a crystal growth apparatus with a long heater life and with high achieved temperature. SOLUTION: A crystal substrate support 10 comprises a cover 12, an alumina sleeve 14, and a quartz tube 16. A crystal substrate 100 is put on the cover 12, and stock gas is introduced from above. The aluminum sleeve 14 is cylindrical with the cover 12 disposed at one end of the cylinder. A first planar heater 18a and a second planar heater 18b are mounted on the inside of the one end in superposition. The first planar heater 18a and the second planar heater 18b are connected in series electrically. This can reduce a current and increase a voltage in case of the same electric power. Since the current is reduced, a power supply cord or the like can be made thin and heat generation at a mercury contact or the like can be restricted. Further, since two sheets of the planar heaters 18 are provided, an amount of produced heat can be increased more to attain high temperature more easily. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007250816(A) 申请公布日期 2007.09.27
申请号 JP20060072141 申请日期 2006.03.16
申请人 NOKODAI TLO KK 发明人 KOKETSU AKINORI;KUMAGAI YOSHINAO;HARITA YUKIICHI;TAKEMOTO KIKUROU;YAHAGI OSAMU;TANAKA MASAAKI;YAMANE TAKAYOSHI
分类号 H01L21/205;C23C16/46;C30B25/10;H05B3/14;H05B3/20;H05B3/74 主分类号 H01L21/205
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