| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus capable of performing the uniform film deposition in a more extensive range than the plasma size. SOLUTION: The plasma CVD apparatus comprises a chamber 10 with a substrate 5 arranged therein, a tubular member 20 having an opening part 18 opened in the chamber 10 so as to be opposite to the substrate 5, a plasma generator 24 for generating plasma into the tubular member 20, and a raw material gas feeder 22 for feeding a raw material gas to the tubular member 20. The inside diameter d of the opening part 18 of the tubular member 20 is smaller than the outside diameter D of the substrate 5. COPYRIGHT: (C)2007,JPO&INPIT |
