| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory having good cell operation characteristics by suppressing deterioration of film quality due to heat treatment in the back process of an inter-electrode insulation film when the inter-electrode insulation film of high dielectric material such as rare earth oxide, rare earth nitride or rare earth oxide nitride is employed in a memory cell; and to provide its fabrication process. SOLUTION: The memory cell of a nonvolatile semiconductor memory comprises a tunnel insulation film 2, a floating gate electrode 3 of Si based semiconductor material, an inter-electrode insulation film 12 of rare earth oxide, rare earth nitride or rare earth oxide nitride, and a control gate electrode 13. A metal silicide film 10 is provided between the floating gate electrode 3 and the inter-electrode insulation film 12. COPYRIGHT: (C)2007,JPO&INPIT
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