SEMICONDUCTOR STRUCTURE COMPRISING SUPERLATTICE STRUCTURE, AND SEMICONDUCTOR DEVICE EQUIPPED THEREWITH

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor structure comprising a superlattice structure composed of a nitride semiconductor having a large band gap which reduces stress applied to an interface and which improves an activating ratio of a carrier, and to provide a semiconductor device provided with the semiconductor structure.

SOLUTION: The semiconductor structure comprises a substrate 8, a GaN base layer 9 deposited on the substrate 8, and the superlattice structure 11 in which an In0.17Al0.83N layer and an Al0.15Ga0.85N layer are laminated periodically on the GaN base layer 9.

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