| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is excellent in flexibility of layout design of a capacitive element and capable of being manufactured through a simple method. <P>SOLUTION: The semiconductor device 100 contains a silicon substrate 101, an interlayer film 103 formed on the silicon substrate 101, a multilevel wiring layer embedded in the interlayer film 103, an F/CPAD 111 provided facing the upper surface of the uppermost wiring layer 105 of the multilevel wiring layer and mounted with an external connection solder ball 113, and a capacitive film 109 interposed between the uppermost wiring layer 105 and the F/CPAD 111. The semiconductor device 100 is equipped with a capacitive element 110 composed of the uppermost wiring layer 105, the capacitive film 109 and the F/CPAD 111. <P>COPYRIGHT: (C)2007,JPO&INPIT |
