发明名称
摘要 <P>PROBLEM TO BE SOLVED: To prevent the deterioration of a resist pattern profile caused by MTT errors of a reticle in a lithography process in manufacturing a semiconductor device, in a method of manufacturing the semiconductor device and an apparatus therefor. <P>SOLUTION: Using a lithography technology, a resist base film containing a material which is exposed to light and produces an acid is formed on a wafer 3 where a pattern is formed. Then, gas or a liquid for controlling the quantity of the acid produced at the time of exposure is sprayed on the resist base film from a nozzle 1, and then a resist film is formed on the resist base film sprayed with the gas or the liquid. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP3981879(B2) 申请公布日期 2007.09.26
申请号 JP20020251032 申请日期 2002.08.29
申请人 发明人
分类号 G03F7/11;H01L21/027;G03F7/38 主分类号 G03F7/11
代理机构 代理人
主权项
地址
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