发明名称 |
Method of forming silicon films |
摘要 |
A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is formed, and the film is then transformed into semiconductor silicon by heat and/or light treatment. Thereby, it is possible to easily produce a silicon film having satisfactory characteristics as an electronic material at low costs, differing from the vacuum process, such as in CVD methods. |
申请公布号 |
EP1715509(A3) |
申请公布日期 |
2007.09.26 |
申请号 |
EP20060076494 |
申请日期 |
2000.03.29 |
申请人 |
SEIKO EPSON CORPORATION;JSR CORPORATION |
发明人 |
SHIMODA, TATSUYA;MIYASHITA, SATORU;SEKI, SHUNICHI;FURUSAWA, MASAHIRO;YUDASAKA, ICHIO;TAKEUCHI, YASUMASA;MATSUKI, YASUO |
分类号 |
H01L21/208;C01B33/02;C30B7/00 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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